SMART SiC Power ICs (Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits)
The State University of New York Polytechnic Institute will develop a scalable, manufacturable, and robust technology platform for silicon carbide (SiC) power integrated circuits. The team will leverage the relatively high maturity of SiC technology to develop highly scalable SiC integrated circuits and support devices and establish a manufacturable process baseline in a state-of-the-art, 6-inch fabrication facility. This allows for much higher power (as compared to silicon) integrated circuits in future. The technology platform opens the door to a myriad of high-performance energy applications, including automotive, industrial, electronic data processing, energy harvesting, and power conditioning.
It is expected that SiC power IC technology will extend performance to 10x higher power levels than Silicon power ICs and will revolutionize many energy applications.