Selective Area Growth for Vertical Power Electronics

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New Haven, Connecticut
Project Term:
09/19/2017 - 06/18/2022

Technology Description:

Yale University will conduct a comprehensive investigation to overcome the barriers in selective area doping of gallium nitride (GaN) through an epitaxial regrowth process for high-performance, reliable GaN vertical transistors. Transistors based on GaN have emerged as promising candidates for future high efficiency, high power applications, but they have been plagued by poor electrical performance attributed to the existing selective doping processes. The team will demonstrate vertical GaN diodes through a selective area regrowth processes with performance similar to those made using current in situ techniques, which are non-selective and therefore less flexible. Key innovations in this project will be to use three-dimensional nanoscale characterizations to understand the regrowth interface formation at the nano scale, and to apply atomic-level manipulation to control impurities, and suppress extrinsic and intrinsic defects at the selective area regrowth interface. This will enable the electronic characteristics of the selective area growth p-n junction active region to be customized allowing for high performance GaN vertical transistors. The successful production of reliable and high-performance GaN vertical transistors on bulk substrates will be transformative to many mid-voltage applications including photovoltaic inverters, motor control, and hybrid automotive.

Potential Impact:

If successful, PNDIODES projects will enable further development of a new class of power converters suitable in a broad range of application areas including automotive, industrial, residential, transportation (rail & ship), aerospace, and utilities.


More energy efficient power electronics could improve the efficiency of the U.S. power sector. They could also significantly improve the reliability and security of the electrical grid.


More efficient power use may help reduce power-related emissions. Low-cost and highly efficient power electronics could also lead to increased adoption of electric vehicles and greater integration of renewable power sources.


Improved power electronics could yield a significant reduction in U.S. electricity consumption, saving American families and businesses money on their power bills.


ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Prof. Jung Han
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