P-Type Gallium Nitride Doping by Controlled Magnesium Diffusion

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OPEN 2018
Santa Clara, California
Project Term:
05/01/2019 - 04/30/2020

Technology Description:

Qromis Inc. will develop an improved selective area doping fabrication method for GaN, ultimately enabling a broader range of higher-performing, manufacturable, and scalable GaN power devices. The team seeks to improve the process using magnesium (Mg) diffusion, in which atoms move from an area of high concentration to a lower one at high temperatures. In particular, Qromis seeks to understand what controls the Mg diffusion rate in GaN to better leverage the phenomenon for the production of high-performance devices. If successful, the Qromis team hopes to accelerate the adoption of GaN power devices in power conversion circuits.

Potential Impact:

This project aims to significantly improve performance of GaN power devices, which will accelerate their adoption in power conversion circuits. Faster adoption of GaN power devices in new products will positively impact a large number of industries where energy efficiency is paramount.


More energy efficient power electronics will increase U.S. energy security and help maintain its technological edge.


Improved GaN devices will enable revolutionary circuits and systems for efficient energy generation and conversion, reducing power-related emissions and encouraging increased EV adoption and renewable power integration.


These technologically advanced power devices will enable energy savings.


ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. Vladimir Odnoblyudov
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