Project Innovation + Advantages:
Advanced doping methods are required to realize the potential of gallium nitride (GaN)-based devices for future high efficiency, high power applications. Ion implantation is a doping process used in other semiconductor materials such as Si and GaAs but has been difficult to use in GaN due to the limited ability to perform a damage recovery anneal in GaN. JR2J will develop an innovative laser spike annealing technique to activate implanted dopants in GaN. Laser spike annealing is a high-temperature (above 1300 ºC) heat treatment technique that activates the dopants in GaN and repairs damage done during the implantation process. By keeping the laser spike duration very short (0.1-100 milliseconds), the technique is hypothesized to be short enough to avoid degradation of the GaN lattice itself. There are commercially available laser spike annealing systems, typically used in Si-based processes, which should be able to be adapted to annealing GaN substrates with small modifications. If the proof of concept is achieved, this could provide a fast road to commercialization.
If successful, PNDIODES projects will enable further development of a new class of power converters suitable in a broad range of application areas including automotive, industrial, residential, transportation (rail & ship), aerospace, and utilities.