kV-class GaN-based Junction Barrier Schottky Diodes Using Ion Implantation
Raleigh, North Carolina
06/18/2021 - 06/17/2023
Project Innovation + Advantages:
Adroit Materials aims to grow and fabricate gallium nitride (GaN)-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process. These JBS diodes are targeted for use in adjustable speed drive (ASD) motor systems, replacing silicon and silicon carbide (Si and SiC)-based diodes. Compared with existing Si diode-based systems, the energy loss in the diode front end rectifier system could be reduced by about 50%. The team will perform selective area doping via implantation of magnesium ions in combination with high pressure, high temperature activation annealing.