Ion Implantation-enabled Fabrication of AlN-based Schottky Diodes

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Program:
Exploratory Topics
Award:
$500,000
Location:
Raleigh,
North Carolina
Status:
ACTIVE
Project Term:
07/05/2021 - 07/04/2023

Project Innovation + Advantages:

Adroit Materials will grow and fabricate aluminum nitride (AlN)-based Schottky diodes with electrical properties that will drastically reduce forward conduction (energy) losses compared with existing high-power diodes. The team will achieve this objective through implanting silicon ions in AlN, a wide bandgap semiconductor, combined with sophisticated point defect control processes to achieve controlled low doping. These breakthroughs enable a paradigm shift for the feasibility of AlN in next-generation power electronics.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. James Tweedie
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
james@adroitmaterials.com

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