Ammonothermal Growth of GaN Substrates for LEDs
Technology Description:
Soraa's new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are required to grow GaN crystals and therefore a new type of chemical growth chamber was invented that is suitable for large-scale manufacturing. A new process was developed that grows GaN crystals at a rate that is more than double that of current processes. The new technology will enable GaN substrates with best-in-world quality at lowest-in-world prices, which in turn will enable new generations of white LEDs, lasers for full-color displays, and high-performance power electronics.
Potential Impact:
If successful, Soraa's advanced LEDs would improve the energy efficiency of buildings, substantially reducing greenhouse gas emissions and positioning the U.S. as a leader in the new substrate manufacturing industry.
Security:
Improving the energy efficiency of our buildings reduces pressure on the electrical grid, improving its stability.
Environment:
Energy savings of up to 300 terawatt-hours per year corresponds to about 210 million metric tons of carbon greenhouse gases. In addition, replacing fluorescent lamps with LEDs will reduce environmental mercury exposures.
Economy:
These applications represent markets of more than $50 billion per year and have the potential to reduce electricity consumption in the United States by 10% or more.
Contact
ARPA-E Program Director:
Dr. Timothy Heidel
Project Contact:
Mark D'Evelyn
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
mdevelyn@soraa.com
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Release Date:
10/26/2009