Advanced Medium Voltage SiC-SJ FETs with Ultra-Low On-resistance

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OPEN 2018
Niskayuna, New York
Project Term:
08/14/2019 - 08/14/2024

Technology Description:

GE Global Research will develop a device architecture for the world’s first high-voltage silicon carbide (SiC) super junction (SJ) field-effect transistors. These devices will provide highly efficient power conversion (such as from direct to alternating current) in medium voltage applications, including renewables like solar and wind power, as well as transportation. The SJ transistor devices consist of pillars of alternating doping providing charge-balancing allowing the devices to scale to high voltage while offering up to 10 times lower losses compared to commercial silicon-based transistors available today. The SJ pillars are formed using high-energy (>40MeV) implantation for a deep selective area doping process in SiC. GE is working with Brookhaven National Laboratory (BNL), which is the only domestic organization that is capable of providing the high-energy implantations, to add a high temperature (~1000ºC) capability during the implantations which is critical to the success of the project.

Potential Impact:

If successful, innovations from GE’s project will enable highly efficient, medium voltage, multi-megawatt power conversion.


This program will enhance U.S. technological leadership and manufacturing of SiC power devices.


If widely implemented, this technology would dramatically reduce energy consumption-related emissions.


Innovations from these devices can save enough energy to power 5.9 million homes annually and save businesses and homeowners money on electricity.


ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Dr. Reza Ghandi
Press and General Inquiries Email:
Project Contact Email:


Rensselaer Polytechnic Institute

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